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Three broad-band miniature monolithic transformer singly balanced diode mixers for operation in the microwave and millimeter-wave bands are reported in this paper. The coupled-line equivalent models are used to synthesize the initial design of these transformers up to 50 GHz. The first one is a broad-band spiral transformer mixer, and the second one is a(More)
This paper describes the design of millimeter-wave wide-band monolithic GaAs passive high electron-mobility transistor (HEMT) switches using the traveling-wave concept. This type of switch combined the off-state shunt transistors and series microstrip lines to form an artificial transmission line with 50-/spl Omega/ characteristic impedance. A 15-80-GHz(More)
The design and performance of two new miniature 360/spl deg/ continuous-phase-control monolithic microwave integrated circuits (MMICs) using the vector sum method are presented. Both are implemented using commercial 0.18-/spl mu/m CMOS process. The first phase shifter demonstrates all continuous phase and an insertion loss of 8 dB with a 37-dB dynamic range(More)
A noise optimization formulation for a CMOS low-noise amplifier (LNA) with on-chip low-Q inductors is presented, which incorporates the series resistances of the on-chip low-Q inductors into the noise optimization procedure explicitly. A 10-GHz LNA is designed and implemented in a standard mixed-signal/RF bulk 0.18-/spl mu/m CMOS technology based on this(More)
Two monolithic 3-bit active phase shifters using the vector sum method to K-band frequencies are reported in this paper. They are separately implemented using commercial 6-in GaAs HBT and high electron-mobility transistor (HEMT) monolithic-microwave integrated-circuit (MMIC) foundry processes. The MMIC HBT active phase shifter demonstrates an average gain(More)
Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-/spl mu/m HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is(More)
A new transmission-line concept, called the field-effect transistor (FET)-integrated coplanar waveguide (CPW), is proposed. This concept treats the passive two-finger FET as CPW and, thus, the scaling rule is more accurate than the previous model, especially in high frequency. The extraction approach of the parameters of the FET-integrated CPW is also(More)
Given a device with a conventionally optimized P/sub 1 dB/ point, this paper proposes a new theory for feedback amplifiers to optimize gain and improves S/sub 22/ (ideally resulting in S/sub 22/=0). The design procedure only requires the small-signal S-parameters and the measured load-pull data of the transistor. To verify this theory, two 800-mW 2-GHz GaAs(More)
A monolithic sub-harmonic mixer is designed for RF frequencies at 180 GHz. It is fabricated on a 2-mil thick InP substrate using 0.08-/spl mu/m pseudomorphic InAlAs/InGaAs HEMT process. In-fixture measurements from 175 to 182 GHz with a sub-harmonic LO drive of 13 dBm at 96 GHz show a conversion loss of 15 dB. This is the first demonstration of a monolithic(More)
A low insertion-loss single-pole double-throw switch in a standard 0.18-/spl mu/m complementary metal-oxide semiconductor (CMOS) process was developed for 2.4- and 5.8-GHz wireless local area network applications. In order to increase the P/sub 1dB/, the body-floating circuit topology is implemented. A nonlinear CMOS model to predict the switch power(More)