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An optimized TiN/amorphous-Silicon/TiN (MSM) two-terminal bidirectional selector is proposed for high density RRAM arrays. The devices show superior performance with high drive current exceeding(More)
We report a novel self-compliant and self-rectifying resistive switching memory cell, with area-scalable switching currents, featuring a set current density of ~5nA/nm2 (<;9uA for a 40nm-size cell),(More)