Hubert Enichlmair

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We propose and verify a model for hot carrier degradation based on the exhaustive evaluation of the energy distribution function for charge carriers in the channel by means of a full-band Monte-Carlo device simulator. This approach allows us to capture the interplay between “hot” and “colder” electrons and their contribution to(More)
We propose a physics-based model for hot-carrier degradation (HCD), which is able to represent HCD observed in n-channel high-voltage MOSFETs with different channel length with a single set of physical parameters. Our approach considers not only damage produced by channel electrons but also by secondary generated channel holes. Although the contribution of(More)
Our physics-based HCD model has been validated using scaled CMOS transistors in our previous work. In this work we apply this model for the first time to a high-voltage nLDMOS device. For the calculation of the degrading behaviour the Boltzmann transport equation solver ViennaSHE is used which also requires high quality adaptive meshing. We discuss the(More)
We have analyzed the worst-case conditions of hot-carrier induced degradation for high-voltage n- and p-MOSFETs with our model. This model is based on the evaluation of the carrier distribution function along the Si/SiO<inf>2</inf> interface, i.e. on thorough consideration of carrier transport. The distribution function obtained by means of a full-band(More)
The random mismatch of semiconductor devices caused by local variations of the production process strongly influences critical performance parameters of analog circuits. In order to estimate the influence of the device mismatch on the circuit yield during the design phase, statistical mismatch models for the individual components must be provided for(More)
For an assessment of the stresses occurring during ball bonding of high-voltage CMOS chips in a structure comprising a thin and a thick silicon dioxide layer below the bonding pad, a dynamic model of the process was set up and the materials parameters were calibrated. For a realistic result of the deformation of the bonding ball during the ultrasonic stage,(More)
We analyze the impact of oxide thickness variations on hot-carrier degradation. For this purpose, we develop an analytical approximation of our hot-carrier degradation (HCD) model. As this approximation is derived from a physics-based model of HCD, it considers all the essential features of this detrimental phenomenon. Among them are the interplay between(More)
We develop an analytical model for hot-carrier degradation based on a rigorous physics-based TCAD model. The model employs an analytical approximation of the carrier acceleration integral (calculated with our TCAD approach) by a fitting formula. The essential features of hot-carrier degradation such as the interplay between single-and multiple-electron(More)