Huayong Pan

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We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩(More)
In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but(More)
We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb(More)
We report the first selective-area growth of high quality InAs(Sb)/GaSb core-shell nanowires on Si substrates using metal-organic chemical vapor deposition (MOCVD) without foreign catalysts. Transmission electron microscopy (TEM) analysis reveals that the overgrowth of the GaSb shell is highly uniform and coherent with the InAs(Sb) core without any misfit(More)
Polyoxometalates have been widely used in the fields of catalysis, analytical chemistry, biochemistry, medicine and synthesis of novel organic-inorganic materials. It is difficult to synthesize pure polymolybdate products from a solution because several kinds of molybdenum-based anions may coexist. As a result, varied acidification methods are commonly used(More)
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires(More)
In this work, needle-shaping of tungsten oxide nanowires occurred during field emission characterization. Compared with nanowires with a flat apex, needle-shaped emitters showed a lower threshold field of 11.9 V µm(-1) for 1 mA cm(-2) and a higher emission current of 1120 µA at 16.2 V µm(-1). Most notably, the measured ageing current dramatically increased(More)
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