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Extreme ultraviolet ͑EUV͒ light sources with efficient emission at 13.5 nm are needed for next-generation lithography. A critical consideration in the development of such a source is the lifetime of collector optics. These experiments expose optics to a large flux of energetic particles coming from the expansion of the pulsed-plasma EUV source to(More)
A critical issue for EUV lithography ͑EUVL͒ is the minimization of collector degradation from intense plasma erosion, debris deposition, and hydrocarbon/oxide contamination. Collector optics reflectivity and lifetime heavily depend on surface chemistry and interactions between fuels and various mirror materials, such as silicon, in addition to high-energy(More)
The University of Illinois at Urbana-Champaign ͑UIUC͒ and several national laboratories are collaborating on an effort to characterize Xe plasma source exposure effects on extreme ultraviolet ͑EUV͒ collector optics. A series of mirror samples provided by SEMATECH were exposed for 10 million shots in an Xtreme Technologies XTS 13-35 commercial EUV discharge(More)
One of the critical issues within extreme ultraviolet lithography is mirror lifetime and the degradation due to debris from the pinch. This research investigated and showed the efficacy of using a helium secondary plasma and heat for removal of Li debris from collecting on the surface of collector optics. A He helicon plasma, which minimizes self-biasing(More)
Successful implementation of extreme ultraviolet (EUV) lithography depends on research and progress toward minimizing collector optics degradation from intense plasma erosion and debris deposition. Thus studying the surface degradation process and implementing innovative methods, which could enhance the surface chemistry causing the mirrors to suffer less(More)
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