Hua-Ching Chien

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The reliability characteristics of polysilicon-oxide-nitride-oxide -silicon (SONOS) devices with different thin tunnel oxides are studied. The tunnel oxynitride growth in a pure N<sub>2</sub>O ambient with high temperature has better performance than in a dry oxidation with N<sub>2 </sub> annealing treatment including leakage current, programming speed,(More)
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