Hsu-Sheng Tsai

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A special chip for direct and real-time observation of resistive changes, including set and reset processes based on Au/ZnO/Au system inside a transmission electron microscope (TEM), was designed. A clear conducting bridge associated with the migration of Au nanoparticles (NPs) inside a defective ZnO film from anode to cathode could be clearly observed by(More)
CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially(More)
The X-ray photoelectron spectroscopy spectra indicate the peak of BB bonds, implying that the elemental boron structure might be formed after the process. The multilayer β-borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the(More)
We herein report a gas-solid transformation mechanism for the surfactant-free synthesis of Te NWs at room temperature by electrolysis of bulk Bi2Te3 using H2Te gas. Te NWs, with an average diameter below 20 nm, grow along the [001] direction due to the unique spiral chains in the crystal structure and show an enhanced Raman scattering effect, a broad(More)
Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly(More)
Graphene, a two-dimensional material with honeycomb arrays of carbon atoms, has shown outstanding physical properties that make it a promising candidate material for a variety of electronic applications. To date, several issues related to the material synthesis and device fabrication need to be overcome. Despite the fact that large-area graphene films(More)
Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi₂Te₃)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues.(More)