Hsin-Hui Hu

  • Citations Per Year
Learn More
In this work, we investigated the effects of drift region resistance on the temperature behaviors of RF power LDMOS transistors. Devices with various implant doses in the drift region were fabricated. Owing to the quasi-saturation effect, the transconductances at high gate voltages are less dependent on the temperature for low-drift-dose device. In(More)
  • 1