Hsien-Ku Chen

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A millimeter-wave multiband phase-locked loop (PLL) is presented for the first time, which covers 40-, 60-, and 80-GHz bands. Three voltage-controlled oscillators corresponding to different frequencies are input to a multiband injection-locked frequency divider and switched on one at a time by a multiplexer as a band selector. The feedback loop embraces the(More)
This paper presents a wideband low-noise amplifier (LNA) based on the cascode configuration with resistive feedback. Wideband input-impedance matching was achieved using a shunt-shunt feedback resistor in conjunction with a preceding &#x03C0; -match network, while the wideband gain response was obtained using a post-cascode inductor (L<sub>P</sub>), which(More)
An intrinsic-tuned, 68 GHz voltage controlled oscillator (VCO) without an extra on-chip accumulation-mode metal oxide semiconductor (MOS)-varactor is demonstrated in a standard, 0.13 m CMOS technology. This VCO exhibits phase noises of 98.4 dBc/Hz and 115.2 dBc/Hz at 1 and 10 MHz offset, respectively, along with a tuning range of 4.5% even under a small(More)
In this paper, the design and application of an on-chip transformer balun for RFIC has presented. Single-ended primary and differential secondary are constructed without using three individual windings for simple layout. Besides, this new topology has the same physical common visual ground point for second winding, which eliminates imbalance due to(More)
Eln this paper, the design and application of Preselect --an on-chip transformer balun for RFIC has presented. LPF LNA Balun Single-ended primary and differential secondary are Mixer constructed without using three individual windings for simple layout. Besides, this new topology has the same ( J.I Fout physical common visual ground point for second(More)
We report a 5.4 mW ultra low dc power low noise amplifier (LNA) at 5.5 GHz, which is based on a 0.35-mum BiCMOS technology. The trade-off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the usage of the HBT-cascade-MOS methodology is simultaneously satisfied the tradeoff between noise figure (NF) and linearity of LNA.(More)
In this paper, a new dual-band receiver frontend for 2.5GHz and 4.9 to 5.9GHz is proposed in 90nm CMOS technology. The proposed receiver front-end embraces a 2.5/5&#x223C;6GHz dual-band low noise amplifier (LNA), a switchable harmonic mixer, an octuple-phase generator, and a wideband 10GHz phase locked-loop. By scaling LC VCO with constant performance, the(More)
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