Hsiang-Lan Lung

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random access memory: A scalable technology S. Raoux G. W. Burr M. J. Breitwisch C. T. Rettner Y.-C. Chen R. M. Shelby M. Salinga D. Krebs S.-H. Chen H.-L. Lung C. H. Lam Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can(More)
In this work, a compact physical model with diode access devices for PCM technology is developed and verified with extensive 2-D and 3-D device simulations. The choice of design parameters allows the operation of the diode access device to serve as a bipolar junction transistor (BJT) for the same physical structure. The PCM array design with these devices(More)
----------The exponential growth in data generation and large-scale data analysis creates an unprecedented need for inexpensive, low-latency, and high-density information storage. This need has motivated significant research into multi-level memory systems that can store multiple bits of information per device. Although both the memory state of these(More)
This paper discusses several key items needed to be considered for phase change random access memory applications from material selection points of view, which include data retention, write speed, cycling endurance, and fabrication process. Various characterization skills were used to probe the properties of the materials, which help to evaluate the(More)
A Shannon-Inspired Approach to Device Characterization Jesse H. Engel, S. Burc Eryilmaz, SangBum Kim, Matthew BrightSky, Chung Lam, Hsiang-Lan Lung, Bruno A. Olshausen, and H.-S. Philip Wong Redwood Center for Theoretical Neuroscience, UC Berkeley, Berkeley, CA, 94720, E-mail: jhengel@stanford.edu Dept. of Electrical Engineering and Center for Integrated(More)
Current large scale implementations of deep learning and data mining require thousands of processors, massive amounts of off-chip memory, and consume gigajoules of energy. Emerging memory technologies such as nanoscale twoterminal resistive switching memory devices offer a compact, scalable and low power alternative that permits on-chip colocated processing(More)
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