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Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss… (More)
In this work, a compact physical model with diode access devices for PCM technology is developed and verified with extensive 2-D and 3-D device simulations. The choice of design parameters allows the operation of the diode access device to serve as a bipolar junction transistor (BJT) for the same physical structure. The PCM array design with these devices… (More)
Traditional approaches to memory characterize the number of distinct states achievable at a given Raw Bit Error Rate (RBER). Using Phase Change Memory (PCM) as an example analog-valued memory, we demonstrate that measuring the mutual information allows optimal design of read-write circuits to increase data storage capacity by 30%. Further, we show the… (More)
The exponential growth in data generation and large-scale data analysis creates an unprecedented need for inexpensive, low-latency, and high-density information storage. This need has motivated significant research into multi-level memory systems that can store multiple bits of information per device. Although both the memory state of these devices and much… (More)
— Current large scale implementations of deep learning and data mining require thousands of processors, massive amounts of off-chip memory, and consume gigajoules of energy. Emerging memory technologies such as nanoscale two-terminal resistive switching memory devices offer a compact, scalable and low power alternative that permits on-chip co-located… (More)
This paper reviews the current development status of phase-change memory (PCM) and discusses the development road map for phase-change memory.
This paper discusses several key items needed to be considered for phase change random access memory applications from material selection points of view, which include data retention, write speed, cycling endurance, and fabrication process. Various characterization skills were used to probe the properties of the materials, which help to evaluate the… (More)