Hsian-Chu Peng

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
We have performed electrical transport measurements on InN films. Our results show that the electron transport in our InN films is metallic-like, that is, within the experimental error the carrier density is temperature-independent over a wide temperature range (4 K= T = 290 K). At low temperatures, the resistivities of our InN devices appear to saturate(More)
  • 1