Houri Johari

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This paper reports on the design, implementation, and characterization of high-density trench-refilled capacitors in complementary metal–oxide–semiconductor (CMOS) grade silicon (1–10 cm). High aspect ratio trench-refilled capacitors offer a capacitance density improvement of three orders of magnitude compared to thin-film capacitors with the same die area(More)
This paper introduces the design and implementation of center-supported bulk acoustic wave (BAW) disk resonators on silicon-on-insulator (SOI) substrates. The use of a SOI substrate enables implementation of single crystal silicon disk resonators and provides electrical isolation between the disk and the substrate. A centersupported 800tm in diameter single(More)
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