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Journals and Conferences
A numerical study on the characteristics of dual-material gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the… (More)
In this paper, we construct unipotent representations for the real orthogonal groups and the metaplectic groups in the sense of Vogan.
A systems model that describes vesicle trafficking during pollen tube growth in Arabidopsis (Arabidopsis thaliana) was constructed. The model is composed of ordinary differential equations that… (More)
Based on the surface potential calculation by the 1-D poisson's equation, the grain boundary barrier height at channel surface is derived accurately assuming an exponential density of trap states… (More)
A novel structure of tunnel field-effect transistor (FET) is introduced with the gate composed of three segments of different work functions. The tunnel current is controlled by an in channel… (More)
In this paper, we discuss the positivity of the Hermitian form ð; Þp introduced by Li in Invent. Math. 27 (1989) 237–255. Let ðG1;G2Þ be a type I dual pair with G1 the smaller group. Let p be an… (More)
A physical-based analytical direct current model is developed for undoped polycrystalline silicon thin-film transistors including both subthreshold and above-threshold regimes by assuming an… (More)
In this paper, we study the simple eigenvectors of two hypomorphic matrices using linear algebra. We also give a new proof of a result of Godsil-McKay.
Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter α in the mobility equation. The drain current noise power… (More)
Let S̃p(q,R) be the universal covering of the symplectic group. In this paper, we study the unitarity problem for the representation induced from a one dimensional character ( , v) of G̃L(q − p)… (More)