The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The… (More)
The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.
Strain-compensated InGaN quantum wells with tensile AlGaN barriers are analyzed as improved gain media for laser diodes emitting at 420-500 nm. The optical gain analysis, taking into account spontaneous and piezoelectric polarizations, exhibits significant improvement in the peak optical gain and differential gain for the strain compensated structures.
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD… (More)
Articles you may be interested in Temporally and spatially resolved photoluminescence investigation of (11 2 ¯ 2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates Appl. Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents Optical properties of… (More)
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GaN nanostructures with various effective refractive index profiles were numerically studied as broadband omnidirectional antireflection structures for concentrator photovoltaics, as compared to that of the conventional GaN with flat surface.
The use of ultra-thin GaN delta-layer in high Al-content AlGaN quantum wells leads to the strong valence subbands rearrangement, which in turn results in high TE-polarized optical gain at emission wavelength ~250-300 nm.
We have observed peculiar behaviors on the dependence of photoluminescence emission peak on excitation fluence in InGaN/GaN multiple quantum wells.