- Full text PDF available (7)
- This year (0)
- Last 5 years (6)
- Last 10 years (18)
Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole wavefunction overlap and improved radiative recombination rate are investigated for nitride LEDs application. The effect of interface abruptness in staggered InGaN QWs on radiative… (More)
The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The… (More)
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD… (More)
The use of double-metallic Au / Ag layers coupled to InGaN quantum well (QW) results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes.
OBJECTIVE Ferrous iron is a major source inducing oxidative stress after intracerebral hemorrhage (ICH). Divalent metal transporter1 (DMT1) is the important and well-known plasma membrane transport protein which was proved to be involved in the transport of free ferrous iron in mammals. Ferroportin 1 (FPN1) is the unique exporter of ferrous iron from… (More)
A well-designed type of ultrathin carbon shell coating a silver core was prepared for the first time through an alternate adsorption and carbonization method. The obtained ultrathin carbon shell shows prominent advantages, including sufficient uniformity, better chemical stability than silica or alumina, biocompatibility, being free of pin-holes and low… (More)
We have generated broadband THz pulses within eight periods of InGaN/GaN quantum wells due to dipole radiation following generation of spatially-separated electrons and holes. Output powers as high as 1 μW have been obtained.
Articles you may be interested in Temporally and spatially resolved photoluminescence investigation of (11 2 ¯ 2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates Appl. Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents Optical properties of… (More)
1 We certify that written approval has been obtained for any proprietary material contained therein. Dedicated to science and the pursuit of progress.
The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.