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AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm Â(More)
Deep-level defect-related optical properties of undoped n-type high-resistivity GaN grown by metalorganic chemical vapor deposition (MOCVD) are investigated using photoluminescence (PL), photoconductivity (PC), and persistent photoconductivity (PPC) measurements. Quite interestingly, persistent photoconductivity was observed. Through the combination of our(More)
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the(More)
The influence of neutron irradiation on the deep levels in GaN epilayer is studied. Thermal stimulated current (TSC) and low temperature photoluminescence (PL) techniques are used to determine the position of deep levels. Four traps are found in irradiated GaN and five traps in unirradiated sample by resolving TSC spectrum. The activation energy(More)
Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H 2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860℃ for 30 s in N 2 ambience. Both the forward and(More)
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