Hong Kai Lai

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By varying composition of the WN<sub>x</sub> film electrode, modulation of the Schottky barrier height (SBH) of WN<sub>x</sub>/n-Ge contacts was demonstrated. The effective SBH decreased from 0.52 eV for W/n-Ge contact to 0.47, 0.42, and 0.39 eV for WN<sub>x</sub>/n-Ge contacts with various nitrogen x components, which were 0.06, 0.09, and 0.15,(More)
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