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In this paper, a new photodetector using a PMOSFET-type photodetector with a transfer gate has been designed and fabricated using a 0.35 mum standard CMOS technology. The photodetector is composed of a floating gate that is tied to an n-well and a transfer gate. The transfer gate controls the photocurrent flow by controlling the barrier for holes in the(More)
Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (E<sub>f</sub>) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (V<sub>fb</sub>,)(More)
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