Ho Jung Chang

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In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al(More)
White polymer light emitting diodes (WPLEDs) with a glass/ITO/PEDOT:PSS/PFO:MDMO-PPV/ TPBI/LIF/Al structure were fabricated in order to investigate the optimum doping concentration of the emission materials. PEDOT:PSS was introduced as the hole transport material. The PFO and MDMO-PPV were used as the light emitting host and the guest materials,(More)
Bi La Ti O (BLT, xs0.67–0.70) ferroelectric thin films were prepared on a single crystalline aluminum oxide film onto 4yx x 3.0 12 Si substrate (c-Al O ySi), and amorphous phase aluminum oxide film onto Si substrates (a-Al O ySi) by the sol–gel method. In 2 3 2 3 order for crystallization, the as-coated films were annealed at the temperature of 650 and 700(More)
UNLABELLED The green polymer light emitting diodes (PLEDs) were fabricated using the solution precursor synthesis method. To improve the device's electrical. and optical properties, gold (Au) nanoparticles (NPs) were added to the hole injection layer (HIL) with poly(3,4-ethylene- dioxythiophene):poly(styrenesulfolnate) ( PEDOT PSS) organic material. The(More)
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