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Journals and Conferences
This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet… (More)
An electromechanical bandpass filter design introduced by Mason and Thurston [l] has been improved, and models have been built which extend the range down to 175 Hz and broaden the passband to 33 X.… (More)
A space qualifiable GaA5 FET amplifier with 300MHz instantaneous bandwidth, 54dB power gain, 38% efficiency and 10W output in the 3.7-4.2GHz band, will be described.
This paper described the design, fabrication, and performance of two monolithic GaAs C-band 90° interdigitated couplers with 50- and 25-ω impedances, respectively. A comparison of the performance of… (More)
This paper presents the design, fabrication, and performance of a broad-band monolithic dual-gate GaAs FET amplifier. The amplifier has a gain of 3.5-5 dB over the 4.5- to 8-GHz band.