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ABSTRACT Layer specific illumination has merits ofenhancement ofresolution, widening DOF and image fitness. Fordense patterns like DRAM cell, layer specific illumination is a major candidate to drive… (More)
Pattern-placement error (PPE) due to lens aberration is characterized for sub-40-nm memory devices. The amount of PPE depends on the feature size. PPE difference between memory cell and traditional… (More)
According to the 2007 international technology roadmap for semiconductors, the overlay budget of 60nm memory devices is 11.3nm. To meet such a tight requirement, each overlay error budget should be… (More)
Significant surgical complications occur in about half of patients after simultaneous pancreas kidney transplantation(SPK) with bladder drainage. Urologic complications are very common in… (More)
According to the 2006 International Technology Roadmap for Semiconductors, the overlay budget of 60nm memory devices is 11nm. To meet such a tight requirement, the total overlay error budget should… (More)