Hisu-Chih Chen

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We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond-shaped Ge and Ge<sub>09</sub>Si<sub>01</sub> gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The proposed dry(More)
For the first time, a CO2 far-infrared laser annealing (CO2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-area-small-load vertical connectors, gate-first high-k/metal gate MOSFETs and non-Al(More)
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