Hisayo S. Momose

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Based on an active transmission line concept and twodimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters ( , , and )(More)
Unified transient and frequency domain noise simulation of random telegraph noise and flicker noise is conducted using a multiphonon-assisted model that considers tunneling probabilities and energy transitions of discretized traps in the gate insulator of MOSFETs. The proposed model is able to concurrently represent the dynamic behavior of electron and hole(More)
The charge separation and charge recombination dynamics in P3HT-ZnO and P3HT-dye-ZnO bulk heterojunction organic-inorganic hybrid solar cells (OIHSCs) prepared by a one-pot method were studied using a transient absorption (TA) method, both for optical absorption of P3HT in the visible region and for optical absorption of SQ36 in the NIR region. In the case(More)
The relationship between the structure of the charge-separation interface and the photovoltaic performance of all-solid dye-sensitized solar cells is reported. This cell is composed of porous a TiO2/perovskite (CH3NH3PbI(x)Cl(3-x))/p-type organic conductor. The porous titania layer was passivated with Al2O3 or Y2O3 to remove surface traps of the porous(More)
Introduction For high-speed logic applications, suppression of the power consumption is very important and thus supply voltage should be reduced at every new generation. In order to realize high performance despite a low supply voltage, gate oxide thickness has to be reduced continuously. In fact, it has been suggested that even 1.6 -1.1 nm EOT (equivalent(More)
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