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We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds. This enables high speed and high density cross-point RRAM(More)
We report a general approach to overcome the enormous obstacle of the integration of CNTs into devices by bonding single-walled carbon nanotubes (SWNTs) films to arbitrary substrates and transferring them into densified and lithographically processable "CNT wafers". Our approach allows hierarchical layer-by-layer assembly of SWNTs into organized(More)