Hisashi Shima

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Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO2/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as the conductive filament mechanism for conventional mode, and(More)
We report a general approach to overcome the enormous obstacle of the integration of CNTs into devices by bonding single-walled carbon nanotubes (SWNTs) films to arbitrary substrates and transferring them into densified and lithographically processable "CNT wafers". Our approach allows hierarchical layer-by-layer assembly of SWNTs into organized(More)