Hisashi Shichijo

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Millimeter and sub-millimeter-wave imaging using solid-state circuits is gaining attention for security and medical applications. To lower cost and increase integration , MOSFETs in CMOS are being investigated for implementing broadband detectors [1-3]. However, neither measured noise-equivalent power (NEP) nor noise floor of the imager was given in [1].(More)
—Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications. Using a compact passive-pixel array architecture, a fully-integrated 280-GHz 4 4 imager is demonstrated. At 1-MHz input modulation frequency, the measured peak responsivity is 5.1 kV/W with variation among the(More)
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