Hisashi Shichijo

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Millimeter and sub-millimeter-wave imaging using solid-state circuits is gaining attention for security and medical applications. To lower cost and increase integration , MOSFETs in CMOS are being investigated for implementing broadband detectors [1-3]. However, neither measured noise-equivalent power (NEP) nor noise floor of the imager was given in [1].(More)
—Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications. Using a compact passive-pixel array architecture, a fully-integrated 280-GHz 4 4 imager is demonstrated. At 1-MHz input modulation frequency, the measured peak responsivity is 5.1 kV/W with variation among the(More)
—OFF-state degradation in drain-extended NMOS transistors is studied. Carefully designed experiments and well-calibrated simulations show that hot carriers, which are generated by impact ionization of surface band-to-band tunneling current, are responsible for interface damage during OFF-state stress. Classical ON-state hot carrier degradation has(More)
—A root-mean-square Schottky diode detector for estimating millimeter-wave (80–110 GHz) signal voltage using dc or low-frequency measurements for debugging and self-testing is demonstrated. The detector is realized in a 45-nm CMOS process without any process modifications. The detector gain at 30-mV rms input voltage is 11 V −1. The insertion loss is less(More)
Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of ~2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of ~660 GHz consisting of an n-type and a(More)
A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failureA comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure" (2008). Department of Electrical and(More)
Off-state degradation in drain extended NMOS transistors is studied. It is shown that the damage is primarily due to Si-O bonds broken by hot carriers. These hot carriers are generated through impact ionization of surface band-to-band tunneling (BTBT) current. The resultant degradation is found to be universal, enabling reliability projections at lower(More)
In this paper, a novel unified equivalent-circuit model with silicon (Si)-substrate skin-effect modeling is demonstrated to describe the performance of coplanar waveguide (CPW) lines with a wide range of dimensions and substrate resistivities, up to 110 GHz. HFSS is used to simulate the CPWs on 8000-, 15-, and 0.015-Ω·cm resistivity Si(More)
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