Hisashi Shichijo

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Millimeter and sub-millimeter-wave imaging using solid-state circuits is gaining attention for security and medical applications. To lower cost and increase integration, MOSFETs in CMOS are being investigated for implementing broadband detectors [1-3]. However, neither measured noise-equivalent power (NEP) nor noise floor of the imager was given in [1].(More)
Schottky-barrier diodes (SBD’s) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications. Using a compact passive-pixel array architecture, a fully-integrated 280-GHz 4 4 imager is demonstrated. At 1-MHz input modulation frequency, the measured peak responsivity is 5.1 kV/W with variation among the pixels.(More)
OFF-state degradation in drain-extended NMOS transistors is studied. Carefully designed experiments and wellcalibrated simulations show that hot carriers, which are generated by impact ionization of surface band-to-band tunneling current, are responsible for interface damage during OFF-state stress. Classical ON-state hot carrier degradation has(More)
In this paper, a novel unified equivalent-circuit model with silicon (Si)-substrate skin-effect modeling is demonstrated to describe the performance of coplanar waveguide (CPW) lines with a wide range of dimensions and substrate resistivities, up to 110 GHz. HFSS is used to simulate the CPWs on 8000-, 15-, and 0.015-Ω·cm resistivity Si(More)
Off-state degradation in drain extended NMOS transistors is studied. It is shown that the damage is primarily due to SiO bonds broken by hot carriers. These hot carriers are generated through impact ionization of surface band-to-band tunneling (BTBT) current. The resultant degradation is found to be universal, enabling reliability projections at lower(More)
Permanent magnet and wound rotor synchronous machines (PMSMs and WRSMs) are often used in diesel enginebased portable power generation systems. In these applications, there is a growing desire to improve machine efficiency in order to reduce fossil fuel requirements. In addition, there is a desire to reduce mass to improve mobility. To attempt to address(More)
A root-mean-square Schottky diode detector for estimating millimeter-wave (80–110 GHz) signal voltage using dc or low-frequency measurements for debugging and self-testing is demonstrated. The detector is realized in a 45-nm CMOS process without any process modifications. The detector gain at 30-mVrms input voltage is 11 V−1. The insertion loss is less than(More)
Through a combination of measurements techniques, we show that the generation of both interface and bulk traps during off-state stress in drain extended NMOS transistors are driven by the same physical mechanism and as such have similar time and voltage dependencies. We also show that the peak interface damage location (obtained from charge pumping(More)
Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of ~2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of ~660 GHz consisting of an n-type and a(More)