Hiroyasu Watanabe

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Amorphous carbon and carbon nitride bottom gate thin film transistors have been fabricated, which show bulk carrier field effect mobilities around 10-3 (cm 2 V-1 s-1) which is orders higher than the previously reported values with p-channel devices at high electric fields between source and drain. The incorporation of nitrogen atoms into the amorphous(More)
For the application of nanocomposite materials to solid insulator in electric power apparatus, we investigated the influence of the dispersibility of nanoparticles on dielectric property. Experiments were carried out in epoxy/alumina nanocomposites with the particle dispersion techniques using ultrasonic wave and centrifugal force. As the result, we(More)
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