We have developed a new technique for generating homogeneously distributed irregular dot patterns useful for optical devices and digital halftoning technologies. To introduce irregularity, we use elaborately designed sequences called low-discrepancy sequences instead of pseudorandom numbers. We also use a molecular-dynamics redistribution method to improve… (More)
A new resonant-tunneling diode with four potential barriers and three quantum wells is fabricated and applied to multiple-valued logic for the first time. The diode exhibited significant double negative resistance characteristics and operated as a triply stable device with a single supply voltage between 180 and 230 K.
The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed:… (More)
Variable-area resonant tunneling diodes have been fabricated using a process in which the lateral confinement is produced by an in-plane implanted gate. The basic operation of such devices is discussed, and the lateral confinement shown by both measurements and numerical modeling to be very nearly symmetrical about the resonant tunneling diode (RID)… (More)
Using the notion of discrepancy, we developed a new technique for generating uniformly distributed dot patterns. We designed and prototyped a light guide having prismatic grooves and micro scatterers on the surface. We experimentally confirmed that the new pattern of the micro scatterers effectively prevents moiré patterns, and improves the luminance… (More)
This paper reports on large area, metal-free deposition of nanocrystalline gra-phene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size L a of the as-obtained films is determined… (More)
This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon-based nanoelectronics. We discuss fabrication technique, electronic properties, and device applications of silicon nanodots as a building block for various nanoscale silicon devices. r 2006 Published by Elsevier Ltd.
Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's are analyzed using two-dimensional numerical simulation based on a drift-diffusion model. A DX center model is introduced assuming Fermi-Dirac statistics for ionized donor density with the aluminum mole fraction dependence of the deep-donor energy level. The calculated results reveal that… (More)