Hiroshi Mizuta

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The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed:(More)
We investigate the impact of varying the grain boundary (GB) position on the output (I d –V d) characteristics of submicron single GB polysilicon thin film transistors (TFTs), by two-dimensional (2D), drift-diffusion based, device simulation. We employ a localized GB trapping model with a distribution of both donor-like and acceptor-like trap states over(More)
A simulation model for deep trap states at grain boundaries in Poly-Si TFTs is developed. The model is used for simulation of single GB TFT devices with sub micron channel lengths. The transport physics is clarified and it is found that in short channel devices (L/sub eff/<100 nm) the single GB TFT shows improved subthreshold behaviour compared to its SOI(More)
This paper reports on large area, metal-free deposition of nanocrystalline gra-phene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size L a of the as-obtained films is determined(More)
Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale(More)