Hiroshi Kotaki

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We have developed a high speed dynamic threshold voltage MOSFET named B-DTMOS for ultra low power operation. This was realized using a bulk wafer containing an individual trench isolated shallow-well with a high concentration buried layer sandwiched between two low concentration layers surrounded by a deep well. The B-DTMOS achieved an excellent propagation(More)
We have developed a novel high speed dynamic threshold voltage MOSFET named LCSED for ultra low power operation. This was realized using sidewall elevated drain. The LCSED achieved the following excellent characteristics as compared to the bulk-DTMOS which we proposed earlier: 60% reduced occupation area; 65% reduced junction capacitance; 67% reduced(More)
The luminescence properties from shallowly Ge-implanted SiO<sub>2</sub> layer were investigated for the purpose of fabrication of optical light source in blue-UV range at very low voltage operation. Germanium negative ions were implanted into 50-nm SiO<sub>2</sub> layer on Si at very shallow depth from the surface to several tens nm at 10-50 keV and(More)
Nanoparticles in insulators exhibit unique electrical properties due to single electron effect. This paper studied about formation of nanoparticles in thin silicon dioxide film by negative ion implantation and electrical properties, such as Coulomb blockade. By silver negative-ion implantation of 30 keV, 1 /spl times/ 10 ions/cm/sup 2/ into 50-nm-thick(More)
This paper shows a self-exchange system to supply liquid fuel and to exhaust CO<sub>2</sub> spontaneously for micro direct methanol fuel cell (muDMFC). The system performs effectively and continuously without any circulation loops and external pumps. The fuel is carried to the anode due to capillary force. The system is consisted of a hydrophobic porous(More)
A 520k transistor COMA matched filter operation at 0.5 V is achieved using a Bulk Dynamic Threshold MOSFET (B-DTMOS) device and a self-adaptive power supply (SAPS) system. B-DTMOS reduces threshold voltage dispersion. The SAPS architecture maximizes performance under worst case conditions.
We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin(More)
This paper demonstrates electrophoresis of silicon micro-rods by applying asymmetric AC bias to two electrodes capped with a thin dielectric film. The silicon micro-rods migrate bi-directionally when asymmetric AC bias is applied to the electrodes. The insulated electrodes significantly contribute to elimination of bubbling and contamination originating(More)
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