Hiroshi Amekura

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X-ray emission induced by high-flux 60 keV negative Cu ion implantation into silica glasses (a-SiO2) has been studied in an energy range of 0.6 – 20 keV. At low ion fluxes, the emission spectrum consists of a strong Cu(L) line at 0.95 keV only, without Cu(K) and Si(K) lines. The result is explained by the electron promotion through the quasi-molecule(More)
Related Articles Downconversion from visible to near infrared through multi-wavelength excitation in Er3+/Yb3+ co-doped NaYF4 nanocrystals J. Appl. Phys. 110, 113113 (2011) High-Q optomechanical GaAs nanomembranes Appl. Phys. Lett. 99, 243102 (2011) Faraday rotation enhancement of gold coated Fe2O3 nanoparticles: Comparison of experiment and theory J. Chem.(More)
Using methods of electronic and atomic-force microscopy, energy-dispersive analysis, laser scanning microscopy, X-ray diffraction, hardness measurements the nitrides of high-entropy alloys (TiZrAlYNb)N, obtained by cathodic-vacuum-arc-vapor-deposition, were investigated. Influence of residual gas pressure on the properties of investigated nitrides was(More)
Ion-flux dependent nanoparticle formation is observed in silica glasses under high-flux 60 keV Cu<sup>&#x2212;</sup> implantation. Under the high-flux implantation, a strong electric field possibly forms in the glass, and may affect the nanoparticle formation via the solute diffusion processes. In this paper, the internal-field formation is evaluated based(More)
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