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A simple new fabrication process of via-holes has been developed for GaAs power FETs. This process features deep trench etching from the wafer surface followed by refilling the trench by conformal electro-plating. The Surface Via-Hole (SVH) is engraved by extremely high rate ECR etching. We obtained the etching rate of over 4 /spl mu/m/min with a completely(More)
This paper describes the design of a distributed brainstorming support tool focusing on gamification. In previous studies, there are very few studies focused on continuous creative activities. Gamification elements in the distributed brainstorming tool are aimed at maintaining intrinsic motivation toward continuous creative activities. The activities for(More)
Grazing Incidence X-ray Fluorescence (GIXRF) and an X-ray interference (XRI) method were used to determine the composition and thickness of both (Ba,Sr)TiO 3 (BST) and, SrRu O 3 (SRO) thin films stacked on a silicon wafer.
We have developed wideband amplifier that can keep over 10 dB gain at the drain voltage/current of 2 V/10 mA in the frequency range from 100 MHz to 3 GHz. The fabricated IC achieved low noise figure and high IP3 (output) of 1.4 dB and 30 dBm at 800 MHz, respectively. The present IC employs 0.2 /spl mu/m gate delta-doped MODFET structure fabricated by using(More)
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