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In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more(More)
A high power amplifier (HPA) with AlGaN/GaN HEMTs on Si substrate is presented. This HPA involves a pair of the HEMT-chips with a source field plate (SFP) and input matching networks on dielectric substrates, which are mounted in a metal package. With harmonic terminations at both the input and the output, output power (Pout) of 170 W, drain efficiency (DE)(More)
A broadband 200W Gallium Nitride (GaN) push-pull amplifier enhanced a second harmonic (2fo) suppression is presented. A point-symmetric 2-stage baluns are applied to enhance the 2fo suppression in input and output circuits. With the presented configuration, the 2fo suppression of 10dB is improved. The broadband amplifier is fabricated with the presented(More)
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