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—In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets separated by a thin insulator and exhibit two resistances, low (R P) or high (R AP), depending on the relative direction of ferromagnet magnetizations, parallel (P) or antiparallel(More)
The magnetization of a magnetic material can be reversed by using electric currents that transport spin angular momentum. In the reciprocal process a changing magnetization orientation produces currents that transport spin angular momentum. Understanding how these processes occur reveals the intricate connection between magnetization and spin transport, and(More)
Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are distributed over a logic-circuit plane, is expected to realize both ultra-low-power and reduced interconnection delay. This paper presents novel nonvolatile logic circuits based on logic-in-memory architecture using magnetic tunnel junctions (MTJs) in combination with MOS(More)