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The effect of strain and intrinsic defects on both electronic and structural characteristics of HfO<sub>2-x</sub> used for sub-100-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The magnitude of the band gap of HfO<sub>2</sub> decreases by about 10% under the applied strain of 5%. The stable crystallographic(More)
— Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most critical issues for assuring the high performance and the reliability of a stacked MOS structure using high-k dielectric thin films. In this study, quantum chemical molecular dynamics was applied to explicate the mechanism of degradation(More)
The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO<sub>2</sub> was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after(More)
We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely "high strain-induced leakage current". To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with(More)
In this study, the change in electronic properties of carbon nanotubes (CNTs) under axial compressive strain was analyzed by using Green's function method based on tight-binding approach. A single (9, 0) CNT structure was used for the calculation. The column buckling of the CNT was occurred and a kink was formed in the buckled CNT with increasing(More)
In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the(More)
Since the discovery of carbon nanotubes (CNTs), graphene and graphene nanoribbons (GNRs), many efforts have been made to apply these carbon nanomaterials to electronic devices and sensors. Strain sensitivity of CNTs and GNRs is one of their unique electronic properties. However, the effect of complex strain field such as buckling deformation on the(More)
Effect of the micro texture of electroplated copper thin film interconnections on stress-induced migration was investigated experimentally and theoretically. The micro texture of electroplated copper thin films changed drastically as a function of the annealing temperature after the electroplating. However, stress-induced migration was activated even though(More)