Learn More
The effect of strain and intrinsic defects on both electronic and structural characteristics of HfO<sub>2-x</sub> used for sub-100-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The magnitude of the band gap of HfO<sub>2</sub> decreases by about 10% under the applied strain of 5%. The stable crystallographic(More)
The effect of point defects such as oxygen vacancy and carbon interstitial on structural characteristics of W/HfO<sub>2</sub> was analyzed by a quantum chemical molecular dynamics method. Post-oxidation annealing is effective for eliminating the oxygen deficiency of gate dielectric films. However, the excess oxygen atoms may remain in the oxide film after(More)
We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely "high strain-induced leakage current". To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with(More)
— Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most critical issues for assuring the high performance and the reliability of a stacked MOS structure using high-k dielectric thin films. In this study, quantum chemical molecular dynamics was applied to explicate the mechanism of degradation(More)
In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the(More)
The mechanical properties of copper thin films formed by cold-rolling and electroplating were compared using tensile test and nano-indentation. Both the Young's modulus and tensile strength of the films were found to vary drastically depending on the microstructure in the films. The Young's modulus of the cold-rolled film was almost same as that of bulk(More)
In order to make clear the effect of strain and intrinsic defects in SiO<inf>2</inf>on both its electronic and structural characteristics, we performed a quantum chemical molecular dynamics analysis for SiO<inf>2-X</inf>, structure under strain. The band gap of SiO<inf>2</inf>changes significantly by the deformation of the Si-O-Si bond angle due to the(More)
The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the(More)
Since the discovery of carbon nanotubes (CNTs), graphene and graphene nanoribbons (GNRs), many efforts have been made to apply these carbon nanomaterials to electronic devices and sensors. Strain sensitivity of CNTs and GNRs is one of their unique electronic properties. However, the effect of complex strain field such as buckling deformation on the(More)