Heung-Soo Park

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The MOSFET flicker (1/f) noise is reduced by 1 to 2 orders by incorporating fluorine into the oxide-silicon interface. This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-size MOSFETs show a considerable increase in the on-off(More)
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