Learn More
A commercially available SiGe HBT MMIC technology is used to realize low noise amplifiers covering a wide frequency band. Minimum noise figures of 1 dB, 1.6 dB and 3.3 d8 are observed in 1.9, 5.7 and 10 GHz LNAs, respectively. The gain of all amplifiers is in excess of 12 dB. The large signal performance is investigated by two-tone intercept point(More)
In this paper, an IF quadrature phase-shift keying demodulator is presented, which performs phase and frequency synchronization in the analog domain. The presented demodulator can be utilized for short-range ultra-wideband wireless communication scenarios, and can greatly simplify the wireless system by relaxing the demands on digital signal processors. The(More)
This paper presents a 64 to 81 GHz PLL realized in a low-cost, 80 GHz HBT technology. The circuit consists of a wide tuning range VCO, a push-push frequency doubler and an analog PLL (divide by 32 frequency divider, phase detector and active loop filter) for phase locking. The measured phase noise is -106 dB/Hz at 1 MHz offset. Output power is -2.5 dBm at(More)
The authors have demonstrated a fully integrated receiver frontend addressing the ISM-Band at 24 GHz utilizing a standard SiGe HBT MMIC process with a relaxed emitter scaling of 1.2 /spl mu/m, for the first time. Extremely compact circuit design and layout techniques are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit(More)
In this paper an impulse-radio ultra-wideband (IR-UWB) hardware demonstrator is presented, which can be used as a radar sensor for highly precise object tracking and breath-rate sensing. The hardware consists of an impulse generator integrated circuit (IC) in the transmitter and a correlator IC with an integrating baseband circuit as correlation receiver.(More)
In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with f<sub>T</sub>/f<sub>max</sub> of 80/90 GHz. The high frequency of(More)
This paper presents microwave capacitive RF-MEMS switches based on a novel simplified fabrication process. The devices are fabricated on a silicon substrate using only one metallisation layer. For the capacitive coupling of the switch, an implanted conductive region and thermally grown silicon oxide is used instead of a second metal layer and an additional(More)
SiGe heterojunction bipolar transistors (HBTs) combine good overall RF performance with low noise figures. The use of SiGe HBT MMICs in RF communication systems promises low cost and high yield. Potential markets today are 10-12 GHz TV broadcasting and multimedia-delivery satellite systems. They can be addressed by present device technologies. Future(More)
In this paper, a 60 GHz system demonstrator for multi-Gb/s, short-range, line-of-sight communications is presented. The system utilizes a highly efficient receiver architecture with phase noise suppression capability, which performs carrier synchronization in the analog domain, eliminating the need for high speed, high precision analog-to-digital(More)