Heng-Jui Weng

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On the industrial HKMG silicon MOSFETs with different channel lengths L down to 14 nm, we present high-resolution TEM cross-section images to highlight interstitial defects in the channel near the source and drain. To examine such neutral defects, we devise a new 2D microscopic scattering model and use it to extract the apparent neutral defects density from(More)
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