Hendro Mario

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A new side reservoir test structure is shown to have improved electromigration reliability over conventional end-of-line reservoir structures. This is believed to be due to the ability of the side reservoir to “trap” migrating pre-existing voids before they reach the cathode end. The ability of the side reservoir to ‘trap’(More)
Previous in-situ electromigration experiments on copper interconnect have shown voids drifting towards the cathode, instead of nucleating at the cathode end. These voids could have pre-existed in the line before stressing and drifted towards the cathode. Furthermore, fatal voids observed from failure analysis that are located away from the cathode also(More)
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