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This paper describes the performances of a new power 0.5 μm gate length AlGaN / GaN HEMT process named GH50_10. This process has been developed to address applications and market needs up to 7 GHz. A specific emphasis has been attached to find a trade- off in between power / efficiency and linearity. After an introduction of the context, a short(More)
The performances and the results of the qualification plan of the new high power GaN HEMT process GH25-10 are summarized in this paper. This technology would be the first ¼ gate length process qualified in Europe on 4” SiC substrate and will be fully open in foundry mode mid of 2014. It addresses applications up to 20 GHz with state of the art(More)
Given the possibility of waterborne diseases caused by inappropriate rainwater harvesting systems, a survey was conducted in Uganda to assess existing knowledge of both physical and non-physical measures that safeguard harvested rainwater. Households who had received rainwater tanks were assessed on issues related to harvested rainwater quality. The study(More)
Driven by the wireless handset market the GaAs industry has seen an immense growth in recent years. The wireless markets will continue to grow. In addition an emerging mmW market with applications in automotive, defense and optoelectronics will further drive the demand for GaAs components. The two biggest European GaAs foundries, Filtronic and UMS, are very(More)
Article history: Received 28 June 2016 Accepted 7 July 2016 Available online xxxx GaN/AlGaN HEMT structures are observed to undergo a reversible, drastic change in the leakage current when coveredwith an additional polymer passivation layer. The polymer layer induces a stress on theHEMT structures, which initiates material migration processes and the(More)
Article history: Received 9 June 2012 Received in revised form 21 June 2012 Accepted 22 June 2012 Available online 19 July 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.098 ⇑ Corresponding author. E-mail address: benoit.lambert@ums-gaas.com (B. UMS have fully qualified the first AlGAN/GaN on SiC HFET(More)
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