Heinz Hoenigschmid

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 A dynamic model has been developed that is based on the Preisach approach for ferroelectric capacitors. It accounts for different switching reaction of the dipoles dependent on the applied voltage gradients. A method for extracting the necessary parameters by measuring the coercive voltage versus applied frequency is provided. The model was verified by(More)
SUMMARY A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capac-itor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution(More)
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