Heiner Ryssel

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  • Witpress R Belmans, A R Bretones, Spain R Gomez, Martin, Spain K Hameyer, Katholieke Universiteit +36 others
  • 2008
WITeLibrary Home of the Transactions of the Wessex Institute, the WIT electronic-library provides the international scientific community with immediate and permanent access to individual papers presented at WIT conferences. Visit the WIT eLibrary at WIT Press publishes leading books in Science and Technology. Visit our website for the current list of(More)
Three-dimensional (3D) simulations of conventional and collimated sputter deposition of titanium into contact holes with high aspect ratios have been carried out using a 3D topography simulator. In this simulation program the device surface is discretized by a set of triangles. The layer growth rate for each triangle is determined by calculating the flux of(More)
A new two-dimensional process modeling program written in Fortran is described. For the first time, this program allows the simulation of all important processing steps occurring in typical sequences involved in the fabrication of integrated circuits such as doping, oxidation, lithography, etching, and layer deposition. The program possesses a modular(More)
Piezoelectric transformers (PTs) reveal a promising potential to replace conventional transformers in driving circuits for switching power applications, e.g. high-side driver for IGBT or MOSFET switches. With the realized driver design it is possible to transfer - galvanically insulated - both energy and information with one single PT. Above all, adapted(More)
ZnO-based thin film transistors (ZnO-TFTs) were fabricated by sputtering of ZnO on 200 nm SiO<inf>2</inf> on p<sup>+</sup>-Si substrates. Forming gas annealing (FGA) was carried out directly after deposition at 400&#x00B0;C, 450&#x00B0;C, and 500&#x00B0;C for 1h. TFTs annealed at 400&#x00B0;C exhibited a high threshold voltage (V<inf>Th</inf>) of 11 V while(More)
In this work, the influences of advanced annealing schemes, spike and flash annealing and combinations of them, on the electrical behavior of modern FD SOI MOSFETs have been investigated by numerical simulations. Process simulations have been performed for comparing the two-dimensional diffusion behavior of the dopants under the different annealing schemes.(More)
In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400 V application. This device is realized in silicon technology which allows process reproducibility, high accuracy in capacitance values, and high quality of the dielectric layers (i.e., endurance at high electric field strengths). It can be manufactured discrete(More)