Heiji Watanabe

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High-quality germanium oxynitride (GeON) gate dielectrics for Ge-based metal-oxide-semiconductor (MOS) devices were fabricated by plasma nitridation of ultrathin thermal oxides on Ge(100) substrates. Although ultrathin oxides with abrupt GeO<inf>2</inf>/Ge interfaces can be formed by conventional dry oxidation, air exposure results in serious electrical(More)
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