Hee-Sung Kang

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We have fabricated normally-off two different GaN MOSFETs with Al<sub>2</sub>O<sub>3</sub> gate insulator with thickness of 38- and 54-nm and investigated the difference in device performance. From the C-V measurement, relatively higher threshold voltage and smaller threshold voltage shift were observed in the device with 54-nm-thick(More)
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