Hee-Joong Kim

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In this paper, we address two systems composed of ODVS(Omni-directional Vision Sensor) for localizing mobile robots in indoor environments. One, with single AoA(Angle of Arrival) system, needs at least three landmarks of predefined location while the other, called stereo AoA system, requires only one landmark of known location for localization. For(More)
Sediment samples were collected from seven locations of the MeeHo stream in Cheongju city, strained out by a sieve, dried by an oven and pulverized by an agate mortar. Instrumental neutron activation analysis (INAA) was applied for the determination of the elemental contents in the sediment samples by using the NAA #1 and #2 irradiation holes of the HANARO(More)
We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to 118.9 cm<sup>2</sup>/V &#x00B7; s, depending on the gas flow rates during the deposition process. The measured noise power spectral density of the drain current shows that the(More)
In this work, we investigate the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO(More)
In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence of conductance and intrinsic field-effect mobility (&#x03BC;<sub>FEi</sub>) in the subthreshold and above-threshold regions, respectively. The measured drain currents(More)
Purified semiconducting single-walled carbon nanotubes (sc-SWCNTs) have been researched for optoelectronic applications due to their high absorption coefficient from the visible to even the near-infrared (NIR) region. Nevertheless, the insufficient electrical characteristics and incompatibility with conventional CMOS processing have limited their wide(More)
In this letter, the energy distributions of the interface and bulk trap densities were separately determined in p-type tungsten diselenide (WSe<sub>2</sub>) thin-film transistors (TFTs) by measuring and analyzing the subthreshold transfer characteristics and space-charge-limited current under the flat-band condition at high drain-to-source voltages. From(More)
In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs) over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, the variable range hopping and the trap-limited band transport are considered as dominant charge transport(More)
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