Corynebacterium glutamicum ATCC13032 and Brevibacterium flavum JV16 were engineered for l-valine production by over-expressing ilvEBN r C genes at 31 °C in 72 h fermentation. Different strategies were carried out to reduce the by-products’ accumulation in l-valine fermentation and also to increase the availability of precursor for l-valine biosynthesis. The… (More)
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Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlOδ/Ta2O5-x/TaOy resistive random access memories were fabricated and characterized. The vertical cells in three layers show good uniformity and high performance… (More)
Brevibacterium flavum ATCC14067 was engineered for l-valine production by overexpression of different ilv genes; the ilvEBNrC genes from B. flavum NV128 provided the best candidate for l-valine production. In traditional fermentation, l-valine production reached 30.08 ± 0.92 g/L at 31°C in 72 h with a low conversion efficiency of 0.129 g/g. To further… (More)
Transmitter switching can provide resiliency and robustness to a communication system with multiple energy harvesting transmitters. However, excessive transmitter switching will bring heavy control overhead. In this paper, a geometric projection-based transmitter switching policy is proposed for a communication system with multiple energy harvesting… (More)
There are two critical challenges which determine the array density of 3D RRAM: 1) the scaling limit in both horizontal and vertical directions; 2) the integration of selector devices in 3D structure. In this work, we present a novel 3D RRAM structure using low-dimensional materials, including 2D graphene and 1D carbon nanotube (CNT), as the edge… (More)
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-μm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Ω/sq with a uniformity of more than 96%. The 1-mm gate width devices… (More)
Molybdenum disulfide (MoS2) has been attracting much attentions due to its excellent electrical and optical properties. We report here the synthesis of large-scale and uniform MoS2 nanosheets with vertically standing morphology using chemical vapor deposition method. TEM observations clearly reveal the growth mechanism of these vertical structures. It is… (More)