He-Ming Zhang

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By analyzing the band structure of strained Si/(101) Si<inf>1&#x2212;x</inf>Ge<inf>x</inf>, the relationship of whose intrinsic carrier concentration (ni) between Ge fraction (x) and temperature were obtained. And then, the model for the intrinsic carrier concentration of strained Si/(101) Si<inf>1&#x2212;x</inf>Ge<inf>x</inf> was established. The results(More)
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