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We have investigated electrical properties of a chalcogenide-based device with naturally oxidized Al electrodes. Intermediate-resistance (IR) states exhibited by current–voltage (I–V) characteristics, dynamic resistance change as a function of pulse height and decay behavior from a low-resistance state of such a device make multi-state storage feasible.(More)
Lateral single-channel (SC) and multi-channel (MC) phase-change memory (PCM) cell structures are numerically analyzed for multi-state storage based on their temperature distributions and their programming characteristics. As studied by finite element modeling (FEM), shorter pulses lead to more gradual transition from the set to the reset state of these(More)
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