In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by the stress, ranging from high tensile one to high compressive one. Using this model, the quantum confinement effect is shown to play an important role to cause the threshold voltage shift as large as about 80mV induced by high-film-stress CESL.
In the present study the bubble behavior in the narrow space are experimentally and numerically examined as the gap between two parallel walls and the position of bubble induction were changed. The main results are as follows. (1) The effects of two parallel walls can be classified by the ratio of the gap between the walls to the maximum bubble radius. If… (More)