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Journals and Conferences
Fabrication of nanopores in 1nm thick carbon nanomembranes with slow highly charged ions Appl. High pressure phase transition of ZnO/SiO2 core/shell nanospheres Nonlinear bleaching, absorption, and scattering of 532-nm-irradiated plasmonic nanoparticles Optimal conditions for magnetization reversal of nanocluster assemblies with random properties Surface… (More)
Anomalous behavior of epitaxial indium nano-contacts on cadmium-zinc-telluride Appl. Tellurium-modified silicon nanowires with a large negative temperature coefficient of resistance Appl. The effects of energy transfer on the Er3+ 1.54μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants Tapered and… (More)
A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN Highly stable charge generation layers using caesium phosphate as n-dopants and inserting interlayers Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures Appl.
We present a comprehensive analysis of terahertz radiation from large area plasmonic photoconductive emitters in relation with characteristics of device substrate. Specifically, we investigate the radiation properties of large area plasmonic photoconductive emitters fabricated on GaAs substrates that exhibit short carrier lifetimes through low-temperature… (More)
Scanning capacitance microscopy is used to characterize the electronic properties of ErAs nanoparticles embedded in GaAs pn junctions grown by molecular beam epitaxy. Voltage-dependent capacitance images reveal localized variations in subsurface electronic structure near buried ErAs nanoparticles at lateral length scales of 20-30 nm. Numerical modeling… (More)
P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes Appl. Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode Appl.
— We report two InAs avalanche photodiode structures with very low background doping in the depletion region. Uniform electric fields and thick depletion regions have been achieved. Excess noise measurements are consistent with k~0 and gain as high as 70 at room temperature is observed. The measured gain-bandwidth product is > 300 GHz. All measurements are… (More)
Articles you may be interested in RHEED transients during InAs quantum dot growth by MBE Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a " nucleation-augmented " method Appl. Area-controlled growth… (More)
We present the first room-temperature photoluminescence from GaSb-based dilute-nitrides, enabled by minimizing the incorporation of non-radiative defects. This material system could provide a pathway for covering the 3-5 µm regime with diode lasers.
Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but… (More)