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Power law time-to-breakdown voltage acceleration is investigated down to ultra-thin oxides (1.1 nm) in the ESD regime in inversion and accumulation. Breakdown modes, oxide degradation and device drifts under ESD-like stress are discussed as function of the oxide thickness. The consequent impacts on the ESD design window are presented. For ESD protection(More)
— A comprehensive study of electrostatic discharge (ESD) characterization of atomically thin graphene is reported. In a material comprising only a few atomic layers, the thermally destructive second breakdown transmission line puls-ing (TLP) current (It2) reaches a remarkable 4 mA/µm for 100-ns TLP and ∼8 mA/µm for 10-ns TLP or an equivalent current density(More)
The phenomenon of impact-ionization is proposed to be leveraged for a novel biosensor design scheme for highly efficient electrical detection of biological species. Apart from self-consistent numerical simulations, an analytical formalism is also presented to provide physical insight into the working mechanism and performance of the proposed sensor. It is(More)
Verification of ESD safety on full chip level is a major challenge for IC design. Especially phenomena with their origin in the overall product setup are posing a hurdle on the way to ESD safe products. For stress according to the Charged Device Model (CDM), a stumbling stone for a simulation based analysis is the complex current distribution among a huge(More)