Harald Gossner

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Power law time-to-breakdown voltage acceleration is investigated down to ultra-thin oxides (1.1 nm) in the ESD regime in inversion and accumulation. Breakdown modes, oxide degradation and device drifts under ESD-like stress are discussed as function of the oxide thickness. The consequent impacts on the ESD design window are presented. For ESD protection(More)
— A comprehensive study of electrostatic discharge (ESD) characterization of atomically thin graphene is reported. In a material comprising only a few atomic layers, the thermally destructive second breakdown transmission line puls-ing (TLP) current (It2) reaches a remarkable 4 mA/µm for 100-ns TLP and ∼8 mA/µm for 10-ns TLP or an equivalent current density(More)
A gas-sensor based on tunnel-field-effect-transistor (TFET) is proposed that leverages the unique current injection mechanism in the form of quantum-mechanical band-to-band tunneling to achieve substantially improved performance compared to conventional metal-oxide-semiconductor field-effect-transistors (MOSFETs) for detection of gas species under ambient(More)