The shallow trench isolation (STI) y-stress effect on deep submicron PDSOI MOSFETs was studied. Instance parameters SAy, SBy and model parameters a1, a2, b1, b2 were proposed to build a compact model for this effect. This model can be easily implemented in the SOI MOSFET compact model like BSIMSOI model. By using this model, we can simulate the STI y-stress… (More)
We report a bias dependent body resistance model for deep submicron PDSOI technology. This model is well verified by the measured data based on the 0.35µm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and can be implemented in the SOI MOSFET compact model like BISMSOI.