Hao-I Yang

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—The threshold voltage (TH) drifts induced by negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) weaken PFETs and high-k metal-gate NFETs, respectively. These long-term TH drifts degrade SRAM cell stability, margin, and performance, and may lead to functional failure over the life of usage. Meanwhile, the contact(More)