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—The threshold voltage (TH) drifts induced by negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) weaken PFETs and high-k metal-gate NFETs, respectively. These long-term TH drifts degrade SRAM cell stability, margin, and performance, and may lead to functional failure over the life of usage. Meanwhile, the contact(More)
In this paper, a new single-ended 6-T SRAM cell is proposed. It has a very strong static noise margin (SNM) during read cycles. Meanwhile, data can be easily written because of floating virtual ground and 1-T equalizer insertion within cell. Low-swing writing ability is achieved by these two approaches. A single-ended current-mode sensing amplifier is also(More)
We have analyzed impacts of NBTI on power-gated SRAM arrays in terms of RSNM, WM, power, performance, and wake-up time. We also studied PMOS-type pre-charge circuit degradation, and compared two basic sensing amplifier structures when they were under NBTI stress. Our results indicated that VT drift of power switch degraded RSNM but improved WM in(More)
The threshold voltage (V<inf>T</inf>) drifts caused by Negative-Bias Temperature Instability (NBTI) and Positive-Bias Temperature Instability (PBTI) degrade stability, margin, and performance of nanoscale SRAM over the lifetime of usage. Moreover, most state-of-the-art SRAMs employ replica timing control scheme to mitigate the effects of excessive leakage(More)